High Purity Semiconductor Graphite Parts: An Essential Part in Semiconductor Production

  • High strength and high temperature resistance.
  • High electrical & thermal conductivity, corrosion resistance.
  • Excellent machinability.
  • High purity and low ash content (can be purified to 5 ppm).
All components of semiconductor graphite part
Description

Semiconductor graphite parts are parts made of special graphite and used in the production process of semiconductors, including graphite consumables in the crystal growth thermal zone as well as high-precision graphite components in wafer processing equipment. As the core of modern electronics industry, semiconductors are widely used in the fields of computers, power supplies, LED, the Internet, solar cells, etc.

We have advanced machining equipment and technology, and can provide semiconductor graphite parts precision machining according to customer drawings and requirements to ensure product accuracy and quality. Meanwhile, we use high purity graphite material, and its ash content can be purified to 5 ppm that can perfectly meet the purity requirements of materials in the semiconductor manufacturing process.

Features
  • High purity. We use high purity graphite material, and can purify the ash content to 5 ppm to meet the purity requirements of materials in the semiconductor manufacturing process.
  • High temperature resistance. In the semiconductor manufacturing process, it requires high temperature processing. Our semiconductor graphite parts can withstand high temperature environments without deformation or breakage.
  • Corrosion resistance. Chemical substances used in the semiconductor manufacturing process have strong corrosive properties. Our semiconductor graphite parts have good corrosion resistance and can operate stably for a long time.
  • Precision machining. We have advanced machining equipment and technology, and can provide semiconductor graphite part precision machining according to customer drawings and requirements to ensure product accuracy and quality.
Specifications
Table 1: Specifications of Semiconductor Graphite Part
Model Density Porosity (open) Grain Size Hardness Rockwell B 5/100 Young's Modulus Flexural Strength Compressive Strength Specific Electrical Resistance Thermal Expansion Thermal Conductivity Ash Value
values g/cm3 μm HRB Mpa Mpa Mpa μΩm x10-6k-1 Wm-1K-1 ppm
RC-6340 1.72 15% 15 80 11000 40 85 16 3.2 105 100
RC-6500 1.77 14% 10 70 10500 45 90 12 4.2 90 100
RC-6510 1.83 10% 10 90 11500 60 130 13 4.2 105 100
RC-6650 1.84 10% 7 95 12500 65 150 14 4.1 95 100
Notes:
  • We have the ability to purify ash content to 5 ppm. If you have purity requirements, please contact us.
  • 1 MPa = 10.2 kgf/cm2; 1 W/m.k = 0.86 kcal/cm.h.°C
  • These properties are typical values and not guaranteed.