High Purity Semiconductor Graphite Parts: An Essential Part in Semiconductor Production

High strength and high temperature resistance.
High electrical & thermal conductivity, corrosion resistance.
Excellent machinability.
High purity and low ash content (can be purified to 5 ppm).

All components of semiconductor graphite part

Description

Semiconductor graphite parts are parts made of special graphite and used in the production process of semiconductors, including graphite consumables in the crystal growth thermal zone as well as high-precision graphite components in wafer processing equipment. As the core of modern electronics industry, semiconductors are widely used in the fields of computers, power supplies, LED, the Internet, solar cells, etc.

We have advanced machining equipment and technology, and can provide semiconductor graphite parts precision machining according to customer drawings and requirements to ensure product accuracy and quality. Meanwhile, we use high purity graphite material, and its ash content can be purified to 5 ppm that can perfectly meet the purity requirements of materials in the semiconductor manufacturing process.

Features

High purity. We use high purity graphite material, and can purify the ash content to 5 ppm to meet the purity requirements of materials in the semiconductor manufacturing process.
High temperature resistance. In the semiconductor manufacturing process, it requires high temperature processing. Our semiconductor graphite parts can withstand high temperature environments without deformation or breakage.
Corrosion resistance. Chemical substances used in the semiconductor manufacturing process have strong corrosive properties. Our semiconductor graphite parts have good corrosion resistance and can operate stably for a long time.
Precision machining. We have advanced machining equipment and technology, and can provide semiconductor graphite part precision machining according to customer drawings and requirements to ensure product accuracy and quality.

Specifications

Table 1: Specifications of Semiconductor Graphite Part
Model	Density	Porosity (open)	Grain Size	Hardness Rockwell B 5/100	Young's Modulus	Flexural Strength	Compressive Strength	Specific Electrical Resistance	Thermal Expansion	Thermal Conductivity	Ash Value
values	g/cm³	–	μm	HRB	Mpa	Mpa	Mpa	μΩm	x10^-6k^-1	Wm^-1K^-1	ppm
RC-6340	1.72	15%	15	80	11000	40	85	16	3.2	105	100
RC-6500	1.77	14%	10	70	10500	45	90	12	4.2	90	100
RC-6510	1.83	10%	10	90	11500	60	130	13	4.2	105	100
RC-6650	1.84	10%	7	95	12500	65	150	14	4.1	95	100
Notes: We have the ability to purify ash content to 5 ppm. If you have purity requirements, please contact us. 1 MPa = 10.2 kgf/cm²; 1 W/m.k = 0.86 ^kcal/cm.h.°C These properties are typical values and not guaranteed.